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|Title:||Characterization of ultrashallow dopant profiles using spreading resistance profiling||Authors:||Tan, L.S.
|Issue Date:||Jan-2002||Citation:||Tan, L.S., Tan, L.C.P., Leong, M.S., Mazur, R.G., Ye, C.W. (2002-01). Characterization of ultrashallow dopant profiles using spreading resistance profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1) : 483-487. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1426370||Abstract:||Electrically active dopant profiles and the position of metallurgical junctions of a shallow ion implanted p+ as well as n+ structures were recovered from spreading resistance profiling measurements using the inverse algorithm. The carrier redistribution effects due to steep dopant gradient and band-gap narrowing effect due to pressure of the spreading resistance probes were accounted in the algorithm. The results were verified by comparison with results from secondary ion mass spectrometry. Results indicated significant displacements between the locations of the metallurgical junctions and the peaks of the spreading resistance profiles.||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/83545||ISSN:||10711023||DOI:||10.1116/1.1426370|
|Appears in Collections:||Staff Publications|
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