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Eng Fong Chor

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Full Name
Eng Fong Chor
Variants
Chor, E.F.
CHOR, ENG FONG
Chor, E.-F.
Eng, F.C.
Chor, Eng Fong
 
Main Affiliation
 
Faculty
 
Email
elecef@nus.edu.sg
 
Other emails
 

Publications

Results 61-80 of 84 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
612003Optical and Electrical Characterization of Annealed Silicon-implanted GaNWang, H.T.; Tan, L.S. ; Chor, E.F. 
622009P-FinFETs with Al segregated NiSi/p+-Si source/drain contact junction for series resistance reductionSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Chor, E.F. ; Yeo, Y.-C. 
63Jul-2000Photoresist patterning and ion implantation degradation effects on flash memory device yieldCha, C.L.; Ngo, Q.; Chor, E.F. ; See, A.K.; Lee, T.J.
641-Oct-2010Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser depositionTian, F.; Chor, E.F. 
652000Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devicesCha, C.L.; Chor, E.F. ; Gong, H. ; Zhang, A.Q.; Chan, L.
662006Properties of p-type and n-type ZnO influenced by P concentrationHu, G. ; Gong, H. ; Chor, E.F. ; Wu, P.
671-Nov-2005Pulsed laser annealing of Be-implanted GaNWang, H.T.; Tan, L.S. ; Chor, E.F. 
68Jan-2002Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studiesChor, E.F. ; Lerdworatawee, J.
692008Rhodium-based Schottky contacts on n-doped gallium nitrideTian, F.; Chor, E.F. 
70Dec-2009Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETsSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
712007Schottky barrier height tuning of silicide on Si1-x CxSinha, M.; Chor, E.F. ; Tan, C.F.
722009Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implantSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Eng, F.C. ; Yeo, Y.-C. 
732000Steep retrograde indium channel profiling for high performance nMOSFETs device fabricationOng, S.Y.; Chor, E.F. ; Leung, Y.K.; Lee, J.; Li, W.S. ; See, A. ; Chan, L.
141-Aug-1992Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilitiesLau, Wai Shing ; Chor, Eng Fong ; Foo, Chee Seng; Khoong, Wai Chee
1529-May-2006Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructureLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
161-Aug-2004Study of activation of beryllium implantation in gallium nitrideWang, H.T.; Tan, L.S. ; Chor, E.F. 
172005Suppressed leakage in low temperature RTA (700°C 30S) junctions with buried epitaxial Si 1-yC yTan, C.F.; Lee, H.; Liu, J.P.; Quek, E.; Chan, L.; Chor, E.F. 
1819-Jul-1999Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporationCha, C.-L.; Chor, E.-F. ; Gong, H. ; Bourdillon, A.J. ; Jia, Y.-M.; Pan, J.-S. ; Zhang, A.-Q.; Chan, L.
19Jun-1997The development of a highly selective KI/I2/H2O/H2SO4 etchant for the selective etching of Al0.3Ga0.7As over GaAsLau, W.S. ; Chor, E.F. ; Kek, S.P.; Abdul Aziz, W.H.B.; Lim, H.C.; Heng, C.H. ; Zhao, R.
202013Thickness dependent electrical characteristics of InAlN/GaN-on-Si MOSHEMTs with Y2O3 gate dielectric and Au-free ohmic contactBera, M.K.; Liu, Y.; Kyaw, L.M.; Ngoo, Y.J.; Chor, E.F.