Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.078
Title: Study of activation of beryllium implantation in gallium nitride
Authors: Wang, H.T.
Tan, L.S. 
Chor, E.F. 
Keywords: A1. Hall measurement
A1. Photoluminescence
A1. Pulsed laser annealing
A1. Rapid thermal annealing
B1. Beryllium implantation
Issue Date: 1-Aug-2004
Citation: Wang, H.T., Tan, L.S., Chor, E.F. (2004-08-01). Study of activation of beryllium implantation in gallium nitride. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 489-493. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.078
Abstract: In this paper, post-implantation thermal activation of beryllium in GaN by rapid thermal annealing (RTA) or pulsed laser annealing (PLA) has been investigated. The result of a two-step RTA, in which the Be-implanted GaN sample was annealed first in forming gas (12% H2, 88% N2) and followed by annealing in pure nitrogen, showed slight p-type for Hall measurement, which was also confirmed by hot probe measurement. However, low activation efficiency and reproducibility was a problem in RTA. In PLA, by optimizing the laser fluence and annealing ambient, efficient activation of Be can be obtained using a 248 nm KrF excimer laser. The photoluminescence (PL) spectra revealed the presence of a Be-related transition level. The Hall measurement results showed that a hole sheet concentration of 2.56 × 1013cm-3 can be achieved with a single-pulse laser irradiation of 0.2 J/cm2 in flowing nitrogen ambient. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/84244
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.078
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