Properties of p-type and n-type ZnO influenced by P concentration

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2408652

Title:	Properties of p-type and n-type ZnO influenced by P concentration
Authors:	Hu, G. Gong, H. Chor, E.F. Wu, P.
Issue Date:	2006
Citation:	Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). Properties of p-type and n-type ZnO influenced by P concentration. Applied Physics Letters 89 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2408652
Abstract:	The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. © 2006 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/57138
ISSN:	00036951
DOI:	10.1063/1.2408652
Appears in Collections:	Staff Publications

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