Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2408652
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dc.titleProperties of p-type and n-type ZnO influenced by P concentration
dc.contributor.authorHu, G.
dc.contributor.authorGong, H.
dc.contributor.authorChor, E.F.
dc.contributor.authorWu, P.
dc.date.accessioned2014-06-17T03:02:43Z
dc.date.available2014-06-17T03:02:43Z
dc.date.issued2006
dc.identifier.citationHu, G., Gong, H., Chor, E.F., Wu, P. (2006). Properties of p-type and n-type ZnO influenced by P concentration. Applied Physics Letters 89 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2408652
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57138
dc.description.abstractThe electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2408652
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2408652
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue25
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000243415200002
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