Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2408652
Title: Properties of p-type and n-type ZnO influenced by P concentration
Authors: Hu, G. 
Gong, H. 
Chor, E.F. 
Wu, P.
Issue Date: 2006
Source: Hu, G., Gong, H., Chor, E.F., Wu, P. (2006). Properties of p-type and n-type ZnO influenced by P concentration. Applied Physics Letters 89 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2408652
Abstract: The electrical conductivity of P-doped ZnO can be controlled by changing the P-doping concentration. With increasing P concentration, ZnO can be changed from n type to p type. At the same time, a redshift of the band gap energy is observed by using the photoluminescence spectroscopy and UV-visible spectrophotometer. X-ray diffraction results show that lattice spacings of ZnO increase with P concentration, which indicates that P substitutes O, and this leads to a lattice spacing increase and an optical band gap energy decrease. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57138
ISSN: 00036951
DOI: 10.1063/1.2408652
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