Please use this identifier to cite or link to this item:
|Title:||Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructure||Authors:||Liu, C.
|Issue Date:||29-May-2006||Citation:||Liu, C., Chor, E.F., Tan, L.S., Dong, Y. (2006-05-29). Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructure. Applied Physics Letters 88 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2209178||Abstract:||Single-crystalline Sc2 O3 was grown on GaN/sapphire template using pulsed laser deposition and the interface characteristics of the Sc2 O3 GaN heterostructure were investigated. An epitaxial relationship of  Sc2 O3 ∥ [21 3- 0]GaN and (222) Sc2 O3 ∥ (0002)GaN was revealed by x-ray diffraction and cross-sectional transmission electron microscopy. A valence band offset of 0.84 eV was obtained by x-ray photoelectron spectroscopy, indicating a conduction band offset of 2.04 eV across the Sc2 O3 GaN heterointerface. In addition, a low interface state density of 4× 1011 eV-1 cm-2 was estimated from capacitance-voltage measurements. The epitaxial nature with good interface characteristics has rendered a substantially low leakage current of 1 μA cm2 at a reverse gate bias of 30 V in the Sc2 O3 GaN metal-oxide-semiconductor structures. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83090||ISSN:||00036951||DOI:||10.1063/1.2209178|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 27, 2019
WEB OF SCIENCETM
checked on Jun 19, 2019
checked on May 24, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.