Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2209178
Title: Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructure
Authors: Liu, C.
Chor, E.F. 
Tan, L.S. 
Dong, Y.
Issue Date: 29-May-2006
Source: Liu, C., Chor, E.F., Tan, L.S., Dong, Y. (2006-05-29). Structural and electrical characterizations of the pulsed-laser-deposition- grown Sc2O3/GaN heterostructure. Applied Physics Letters 88 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2209178
Abstract: Single-crystalline Sc2 O3 was grown on GaN/sapphire template using pulsed laser deposition and the interface characteristics of the Sc2 O3 GaN heterostructure were investigated. An epitaxial relationship of [112] Sc2 O3 ∥ [21 3- 0]GaN and (222) Sc2 O3 ∥ (0002)GaN was revealed by x-ray diffraction and cross-sectional transmission electron microscopy. A valence band offset of 0.84 eV was obtained by x-ray photoelectron spectroscopy, indicating a conduction band offset of 2.04 eV across the Sc2 O3 GaN heterointerface. In addition, a low interface state density of 4× 1011 eV-1 cm-2 was estimated from capacitance-voltage measurements. The epitaxial nature with good interface characteristics has rendered a substantially low leakage current of 1 μA cm2 at a reverse gate bias of 30 V in the Sc2 O3 GaN metal-oxide-semiconductor structures. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83090
ISSN: 00036951
DOI: 10.1063/1.2209178
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