Please use this identifier to cite or link to this item:
|Title:||Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication||Authors:||Ong, S.Y.
Reverse short channel effects
Short channel effects
Steep retrograde channel profile
|Issue Date:||2000||Citation:||Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L. (2000). Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication. Proceedings of SPIE - The International Society for Optical Engineering 4228 : 270-278. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405423||Abstract:||Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant (NLDD RTA). Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.||Source Title:||Proceedings of SPIE - The International Society for Optical Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/50644||ISSN:||0277786X||DOI:||10.1117/12.405423|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.