Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.405423
Title: Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication
Authors: Ong, S.Y.
Chor, E.F. 
Leung, Y.K.
Lee, J.
Li, W.S. 
See, A. 
Chan, L.
Keywords: Ihdium
Reverse short channel effects
Short channel effects
Steep retrograde channel profile
Issue Date: 2000
Citation: Ong, S.Y., Chor, E.F., Leung, Y.K., Lee, J., Li, W.S., See, A., Chan, L. (2000). Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication. Proceedings of SPIE - The International Society for Optical Engineering 4228 : 270-278. ScholarBank@NUS Repository. https://doi.org/10.1117/12.405423
Abstract: Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant (NLDD RTA). Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/50644
ISSN: 0277786X
DOI: 10.1117/12.405423
Appears in Collections:Staff Publications

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