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|Title:||Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant||Authors:||Sinha, M.
|Issue Date:||2009||Citation:||Sinha, M.,Lee, R.T.P.,Devi, S.N.,Lo, G.-Q.,Eng, F.C.,Yeo, Y.-C. (2009). Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant. Digest of Technical Papers - Symposium on VLSI Technology : 106-107. ScholarBank@NUS Repository.||Abstract:||We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [Nickel (Ni) - Dysprosium (Dy)] silicide, while achieving low contact resistance RC, for both n- and p- FETs. A key enabler is the Aluminum ion implant technology for independent and effective reduction of RC for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ∼20 % IDSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I DSAT enhancement of ∼49 % over n-FinFETs with NiSi:C contacts.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/84197||ISBN:||9784863480094||ISSN:||07431562|
|Appears in Collections:||Staff Publications|
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