Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]

Results 1-20 of 337 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
126-Mar-20071.31 μm GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Zhang, D.H.; Ng, B.K.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
21-Jun-20046H-SiC(0 0 0 1) phase transition: Evolution of the (6 × 6) magic clustersTok, E.S. ; Ong, W.J.; Wee, A.T.S. 
317-Sep-2007A new scenario in probe local oxidation: Transient pressure-wave-assisted ionic spreading and oxide pattern formationXie, X.N. ; Chung, H.J. ; Liu, Z.J.; Yang, S.-W.; Sow, C.H. ; Wee, A.T.S. 
411-Nov-2004A surface chemistry route to molybdenum sulfide and germanide films using the single-source precursor tetrakis(diethylaminodithiocarbomato)molybdate(IV)Ouyang, T.; Loh, K.P. ; Zhang, H. ; Vittal, J.J. ; Vetrichelvan, M. ; Chen, W. ; Gao, X. ; Wee, A.T.S. 
515-Mar-2007Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7Zilani, M.A.K. ; Xu, H. ; Sun, Y.Y. ; Wang, X.-S. ; Wee, A.T.S. 
62009Aggregates-induced dynamic negative differential resistance in conducting organic filmsXie, X.N. ; Wang, J. ; Loh, K.P. ; Wee, A.T.S. 
7Dec-2004An investigation of structure, magnetic properties and magnetoresistance of Ni films prepared by sputteringYi, J.B. ; Zhou, Y.Z.; Ding, J. ; Chow, G.M. ; Dong, Z.L.; White, T.; Gao, X. ; Wee, A.T.S. ; Yu, X.J. 
81-Jun-2006Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Ma, B.S.; Ng, T.K.; Liu, R. ; Wee, A.T.S. 
920-Oct-2001Annealing effects of tantalum thin films sputtered on [001] silicon substrateLiu, L. ; Gong, H. ; Wang, Y. ; Wang, J. ; Wee, A.T.S ; Liu, R. 
1029-May-2000Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depthsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A.; Chan, L.; Lu, Y.F.; Song, W.D.; Chua, L.H.
112000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
12Jan-2005Atomic force microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)Chen, W. ; Loh, K.P. ; Lin, M.; Liu, R. ; Wee, A.T.S. 
1323-Oct-2003Atomic scale oxidation of silicon nanoclusters on silicon carbide surfacesChen, W. ; Xie, X.N. ; Xu, H. ; Wee, A.T.S. ; Loh, K.P. 
1410-Dec-2005Atomic structure of the 6H-SiC(0 0 0 1) nanomeshChen, W. ; Xu, H. ; Liu, L. ; Gao, X. ; Qi, D. ; Peng, G. ; Tan, S.C. ; Feng, Y. ; Loh, K.P. ; Wee, A.T.S. 
15Apr-2004Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysisZheng, J.-C. ; Huan, C.H.A. ; Wee, A.T.S. ; Van Hove, M.A.; Fadley, C.S.; Shi, F.J.; Rotenberg, E.; Barman, S.R.; Paggel, J.J.; Horn, K.; Ebert, Ph.; Urban, K.
1617-Sep-2008Band-like transport in surface-functionalized highly solution-processable graphene nanosheetsWang, S. ; Chia, P.-J. ; Chua, L.-L. ; Zhao, L.-H.; Png, R.-Q. ; Sivaramakrishnan, S. ; Zhou, M. ; Goh, R.G.-S. ; Friend, R.H. ; Wee, A.T.-S. ; Ho, P.K.-H. 
171-Apr-2007BEEM studies on metal high K-dielectric HfO2 interfacesZheng, Y. ; Troadec, C.; Wee, A.T.S. ; Pey, K.L.; O'Shea, S.J.; Chandrasekhar, N. 
1823-Dec-2008Bottom-up growth of epitaxial graphene on 6H-SiC(0001)Huang, H. ; Chen, W. ; Chen, S. ; Wee, A.T.S. 
19Dec-2007C60 Molecular chains on α-sexithiophene nanostripesZhang, H.L. ; Chen, W. ; Chen, L. ; Huang, H. ; Wang, X.S. ; Yuhara, J.; Wee, A.T.S. 
202-Nov-2006C60 on SiC nanomeshChen, W. ; Zhang, H.L. ; Xu, H. ; Tok, E.S. ; Loh, K.P. ; Wee, A.T.S.