Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2006.10.022

Title:	Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7
Authors:	Zilani, M.A.K. Xu, H. Sun, Y.Y. Wang, X.-S. Wee, A.T.S.
Keywords:	Catalysis Cobalt Fullerenes Scanning tunneling microscopy Silicon Silicon carbide X-ray photoelectron spectroscopy
Issue Date:	15-Mar-2007
Citation:	Zilani, M.A.K., Xu, H., Sun, Y.Y., Wang, X.-S., Wee, A.T.S. (2007-03-15). Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7. Applied Surface Science 253 (10) : 4554-4559. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2006.10.022
Abstract:	We present a study on the adsorption and thermal decomposition of C60 on Co covered Si(111)-7 × 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 × 7 are identified as a possible adsorption site where 51 ± 3% of C60 molecules adsorb at room temperature. On Co/Si(111)-7 × 7, C60 molecules start to decompose at 450 °C, and are completely dissociated to form SiC by 720 °C. This temperature is significantly lower than 910 °C at which C60 completely dissociates on clean Si(111)-7 × 7. This is a possible low temperature method for growing crystalline SiC films using C60 as a precursor molecule. © 2006 Elsevier B.V. All rights reserved.
Source Title:	Applied Surface Science
URI:	http://scholarbank.nus.edu.sg/handle/10635/95732
ISSN:	01694332
DOI:	10.1016/j.apsusc.2006.10.022
Appears in Collections:	Staff Publications

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