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|Title:||Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7||Authors:||Zilani, M.A.K.
Scanning tunneling microscopy
X-ray photoelectron spectroscopy
|Issue Date:||15-Mar-2007||Citation:||Zilani, M.A.K., Xu, H., Sun, Y.Y., Wang, X.-S., Wee, A.T.S. (2007-03-15). Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7. Applied Surface Science 253 (10) : 4554-4559. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2006.10.022||Abstract:||We present a study on the adsorption and thermal decomposition of C60 on Co covered Si(111)-7 × 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 × 7 are identified as a possible adsorption site where 51 ± 3% of C60 molecules adsorb at room temperature. On Co/Si(111)-7 × 7, C60 molecules start to decompose at 450 °C, and are completely dissociated to form SiC by 720 °C. This temperature is significantly lower than 910 °C at which C60 completely dissociates on clean Si(111)-7 × 7. This is a possible low temperature method for growing crystalline SiC films using C60 as a precursor molecule. © 2006 Elsevier B.V. All rights reserved.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/95732||ISSN:||01694332||DOI:||10.1016/j.apsusc.2006.10.022|
|Appears in Collections:||Staff Publications|
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