Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2006.10.022
Title: Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7
Authors: Zilani, M.A.K. 
Xu, H. 
Sun, Y.Y. 
Wang, X.-S. 
Wee, A.T.S. 
Keywords: Catalysis
Cobalt
Fullerenes
Scanning tunneling microscopy
Silicon
Silicon carbide
X-ray photoelectron spectroscopy
Issue Date: 15-Mar-2007
Citation: Zilani, M.A.K., Xu, H., Sun, Y.Y., Wang, X.-S., Wee, A.T.S. (2007-03-15). Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7. Applied Surface Science 253 (10) : 4554-4559. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2006.10.022
Abstract: We present a study on the adsorption and thermal decomposition of C60 on Co covered Si(111)-7 × 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 × 7 are identified as a possible adsorption site where 51 ± 3% of C60 molecules adsorb at room temperature. On Co/Si(111)-7 × 7, C60 molecules start to decompose at 450 °C, and are completely dissociated to form SiC by 720 °C. This temperature is significantly lower than 910 °C at which C60 completely dissociates on clean Si(111)-7 × 7. This is a possible low temperature method for growing crystalline SiC films using C60 as a precursor molecule. © 2006 Elsevier B.V. All rights reserved.
Source Title: Applied Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/95732
ISSN: 01694332
DOI: 10.1016/j.apsusc.2006.10.022
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

8
checked on Nov 17, 2018

WEB OF SCIENCETM
Citations

8
checked on Nov 7, 2018

Page view(s)

73
checked on Nov 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.