Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.apsusc.2006.10.022
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dc.titleAdsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7
dc.contributor.authorZilani, M.A.K.
dc.contributor.authorXu, H.
dc.contributor.authorSun, Y.Y.
dc.contributor.authorWang, X.-S.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:15:10Z
dc.date.available2014-10-16T09:15:10Z
dc.date.issued2007-03-15
dc.identifier.citationZilani, M.A.K., Xu, H., Sun, Y.Y., Wang, X.-S., Wee, A.T.S. (2007-03-15). Adsorption and thermal decomposition of C60 on Co/Si(111)-7 × 7. Applied Surface Science 253 (10) : 4554-4559. ScholarBank@NUS Repository. https://doi.org/10.1016/j.apsusc.2006.10.022
dc.identifier.issn01694332
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95732
dc.description.abstractWe present a study on the adsorption and thermal decomposition of C60 on Co covered Si(111)-7 × 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(111)-7 × 7 are identified as a possible adsorption site where 51 ± 3% of C60 molecules adsorb at room temperature. On Co/Si(111)-7 × 7, C60 molecules start to decompose at 450 °C, and are completely dissociated to form SiC by 720 °C. This temperature is significantly lower than 910 °C at which C60 completely dissociates on clean Si(111)-7 × 7. This is a possible low temperature method for growing crystalline SiC films using C60 as a precursor molecule. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.apsusc.2006.10.022
dc.sourceScopus
dc.subjectCatalysis
dc.subjectCobalt
dc.subjectFullerenes
dc.subjectScanning tunneling microscopy
dc.subjectSilicon
dc.subjectSilicon carbide
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.apsusc.2006.10.022
dc.description.sourcetitleApplied Surface Science
dc.description.volume253
dc.description.issue10
dc.description.page4554-4559
dc.description.codenASUSE
dc.identifier.isiut000244977000018
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