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|Title:||An investigation of structure, magnetic properties and magnetoresistance of Ni films prepared by sputtering||Authors:||Yi, J.B.
Anisotropic magnetoresistance (AMR)
|Issue Date:||Dec-2004||Citation:||Yi, J.B., Zhou, Y.Z., Ding, J., Chow, G.M., Dong, Z.L., White, T., Gao, X., Wee, A.T.S., Yu, X.J. (2004-12). An investigation of structure, magnetic properties and magnetoresistance of Ni films prepared by sputtering. Journal of Magnetism and Magnetic Materials 284 (1-3) : 303-311. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2004.06.052||Abstract:||Ni films were deposited by magnetron sputtering with a relatively high deposition rate (0.5nm/s). We have investigated the structure and magnetic properties of Ni films with different thicknesses. Strongly reduced magnetization has been found in the as-deposited Ni film. Our structural investigation (high-resolution TEM, EXAFS) reveals the presence of amorphous structure. The crystallinity increases with increasing film thickness, accompanied by an increase of magnetization. In 15 nm film or below, circular crystallites were found after annealing at 500°C. Anisotropic magnetoresistance (AMR) has been observed and it is strongly dependent on the microstructure. © 2004 Elsevier B.V. All rights reserved.||Source Title:||Journal of Magnetism and Magnetic Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/52783||ISSN:||03048853||DOI:||10.1016/j.jmmm.2004.06.052|
|Appears in Collections:||Staff Publications|
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