1. ScholarBank@NUS

Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]

Results 101-120 of 337 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
10114-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
1022004Growth of Co nanoclusters on SiC honeycomb templatesChen, W. ; Loh, K.P. ; Xu, H. ; Wee, A.T.S. 
10312-Jan-2004Growth of monodispersed cobalt nanoparticles on 6H-SiC(0001) honeycomb templateChen, W. ; Loh, K.P. ; Xu, H. ; Wee, A.T.S. 
10430-Oct-2009Growth of well-aligned Bi nanowire on Ag(1 1 1)Zhang, H.L. ; Chen, W. ; Wang, X.S. ; Yuhara, J.; Wee, A.T.S. 
105Apr-2006High resolution electron energy loss and X-ray near edge absorption spectroscopic studies of diamond film functionalised with allyl alcoholLoh, K.P. ; Lim, C.W.; Gao, X. ; Qi, D. ; Wee, A.T.S. 
106Sep-2000High resolution transmission electron microscopy study of the initial growth of diamond on siliconLin, T.; Loh, K.P. ; Wee, A.T.S. ; Shen, Z.X. ; Lin, J. ; Lai, C.H. ; Gao, Q.J.; Zhang, T.J.
1072007Hot electron transport in Au-Hf O2 -Si O2 -Si structures studied by ballistic electron emission spectroscopyZheng, Y. ; Wee, A.T.S. ; Pey, K.L.; Troadec, C.; O'Shea, S.J.; Chandrasekhar, N. 
108Dec-2000Improved NiSi salicide process using presilicide N2 + implant for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Wee, A.T.S. ; Chan, L.
109Jul-2004In situ XPS and SIMS analysis of O 2 + beam-induced silicon oxidationTan, S.K.; Yeo, K.L.; Wee, A.T.S. 
1101-Nov-2000Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperatureZhang, K.; Zhu, F.; Huan, C.H.A. ; Wee, A.T.S. 
11115-Nov-2000Influence of annealing temperature on ferroelectric properties of SrBi2Ta2O9 thin films prepared by off-axis radio frequency magnetron sputteringTay, S.T.; Jiang, X.H.; Huan, C.H.A. ; Wee, A.T.S. ; Liu, R. 
112Aug-2001Influence of sulphonation on polymer and polymer blend surfaces studied by atomic force microscopyWee, A.T.S. ; Guo, Y.P. ; Tan, K.C.; Wang, H.Q. ; Leong, T.K.; Huan, C.H.A. 
113Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
1142007Interdiffusion in narrow InGaAsNGaAs quantum wellsLiu, W.; Zhang, D.H.; Huang, Z.M.; Wang, S.Z.; Yoon, S.F.; Fan, W.J.; Liu, C.J. ; Wee, A.T.S. 
115Feb-2009International Journal of Nanoscience: Guest editorialWee, A.T.S. ; Wan, A.C.A.; Feng, Y.P. ; Zhang, H.; Jalil, M.B.A. ; Valiyaveettil, S. 
11615-May-2006Interpretation of an anomalous peak in low-temperature photoluminescence measurements of bulk GaAs1-xNx on GaAsCheah, W.K.; Fan, W.J.; Yoon, S.F.; Loke, W.K.; Liu, R. ; Wee, A.T.S. 
1172006Interpretation of anomalous photoluminescence peak in GaAs 1-xNx grown by molecular beam epitaxyFan, W.J.; Cheah, W.K.; Yoon, S.F.; Zhang, D.H.; Liu, R. ; Wee, A.T.S. 
11831-Jan-2000Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopyZhu, F.; Huan, C.H.A. ; Zhang, K.; Wee, A.T.S. 
119Jan-2003Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profilingYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Zhou, F.F.; See, A.
1202002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S.