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Title: In situ XPS and SIMS analysis of O 2 + beam-induced silicon oxidation
Authors: Tan, S.K.
Yeo, K.L.
Wee, A.T.S. 
Keywords: Ion beam oxidation
Secondary ion mass spectrometry
Surface transient
X-ray photoelectron spectroscopy
Issue Date: Jul-2004
Citation: Tan, S.K., Yeo, K.L., Wee, A.T.S. (2004-07). In situ XPS and SIMS analysis of O 2 + beam-induced silicon oxidation. Surface and Interface Analysis 36 (7) : 640-644. ScholarBank@NUS Repository.
Abstract: The chemical composition variation of silicon under 4keV O 2 + ion beam bombardment at different incident angles was studied by in situ small-area XPS. The changes in secondary ion profile ( 30Si +, 44SiO +, 56Si 2 +, 60SiO 2 +) during oxygen ion beam bombardment also have been monitored. We present a direct correlation of the changes in secondary ion depth profile with surface composition during sputtering. Evolution of the secondary ion profile obtained from SIMS shows similar trends with variation of oxygen concentration in the crater surface measured by XPS. It is shown that when the oxygen ion beam incidence angle is 40°, the formation of sub-oxide is favoured and thus the MISR value for 44SiO +/ 56Si 2 + is lower than for 30Si +/ 56Si 2. At 40° bombardment there are similar amounts of SiO 2 and sub-oxides present on the crater surface and the MISR values for 44SiO +/ 56Si 2 + and 30Si +/ 56Si 2 + are also similar. Copyright © 2004 John Wiley & Sons, Ltd.
Source Title: Surface and Interface Analysis
ISSN: 01422421
DOI: 10.1002/sia.1903
Appears in Collections:Staff Publications

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