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https://doi.org/10.1063/1.2736943
| Title: | Interdiffusion in narrow InGaAsNGaAs quantum wells | Authors: | Liu, W. Zhang, D.H. Huang, Z.M. Wang, S.Z. Yoon, S.F. Fan, W.J. Liu, C.J. Wee, A.T.S. |
Issue Date: | 2007 | Citation: | Liu, W., Zhang, D.H., Huang, Z.M., Wang, S.Z., Yoon, S.F., Fan, W.J., Liu, C.J., Wee, A.T.S. (2007). Interdiffusion in narrow InGaAsNGaAs quantum wells. Journal of Applied Physics 101 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736943 | Abstract: | Interdiffusion in In0.32 Ga0.68 As0.984 N0.016 GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. © 2007 American Institute of Physics. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/96954 | ISSN: | 00218979 | DOI: | 10.1063/1.2736943 |
| Appears in Collections: | Staff Publications |
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