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|Title:||Interdiffusion in narrow InGaAsNGaAs quantum wells||Authors:||Liu, W.
|Issue Date:||2007||Citation:||Liu, W., Zhang, D.H., Huang, Z.M., Wang, S.Z., Yoon, S.F., Fan, W.J., Liu, C.J., Wee, A.T.S. (2007). Interdiffusion in narrow InGaAsNGaAs quantum wells. Journal of Applied Physics 101 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736943||Abstract:||Interdiffusion in In0.32 Ga0.68 As0.984 N0.016 GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. © 2007 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96954||ISSN:||00218979||DOI:||10.1063/1.2736943|
|Appears in Collections:||Staff Publications|
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