Please use this identifier to cite or link to this item:
|Title:||Interdiffusion in narrow InGaAsNGaAs quantum wells|
|Source:||Liu, W., Zhang, D.H., Huang, Z.M., Wang, S.Z., Yoon, S.F., Fan, W.J., Liu, C.J., Wee, A.T.S. (2007). Interdiffusion in narrow InGaAsNGaAs quantum wells. Journal of Applied Physics 101 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736943|
|Abstract:||Interdiffusion in In0.32 Ga0.68 As0.984 N0.016 GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. © 2007 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 28, 2018
WEB OF SCIENCETM
checked on Feb 19, 2018
checked on Mar 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.