Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2736943
Title: Interdiffusion in narrow InGaAsNGaAs quantum wells
Authors: Liu, W.
Zhang, D.H.
Huang, Z.M.
Wang, S.Z.
Yoon, S.F.
Fan, W.J.
Liu, C.J. 
Wee, A.T.S. 
Issue Date: 2007
Citation: Liu, W., Zhang, D.H., Huang, Z.M., Wang, S.Z., Yoon, S.F., Fan, W.J., Liu, C.J., Wee, A.T.S. (2007). Interdiffusion in narrow InGaAsNGaAs quantum wells. Journal of Applied Physics 101 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736943
Abstract: Interdiffusion in In0.32 Ga0.68 As0.984 N0.016 GaAs multiple quantum wells with well widths of 2 and 4 nm, respectively, was investigated both experimentally and theoretically. Maximum blueshifts of 206 and 264 meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In-Ga and N-As interdiffusions played key roles for the large blueshifts. The significant In-Ga interdiffusion occurred at 650 °C while the N diffusion occurred at a temperature above 700 °C. The theoretical results are in good agreement with the experimental observations. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/96954
ISSN: 00218979
DOI: 10.1063/1.2736943
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