1. ScholarBank@NUS

Thye Shen, Andrew Wee

rp02822

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Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]

Results 41-60 of 337 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
411-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
4222-Mar-2001Correlation between the corrosion behavior and corrosion films formed on the surfaces of Mg82-xNi18Ndx (x = 0, 5, 15) amorphous alloysYao, H.B.; Li, Y. ; Wee, A.T.S. ; Pan, J.S. ; Chai, J.W.
432008Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1-x Gex filmsKo, V.; Teo, K.L. ; Liew, T. ; Chong, T.C. ; Liu, T. ; Wee, A.T.S. ; Du, A.Y.; Stoffel, M.; Schmidt, O.G.
441-Aug-2003Corrosion behavior of melt-spun Mg65Ni20Nd15 and Mg65Cu25Y10 metallic glassesYao, H.B.; Li, Y. ; Wee, A.T.S. 
451-Mar-2006Creating polymer structures of tunable electric functionality by nanoscale discharge-assisted cross-linking and oxygenationXie, X.N. ; Deng, M. ; Xu, H. ; Yang, S.W.; Qi, D.C. ; Gao, X.Y. ; Chung, H.J. ; Sow, C.H. ; Tan, V.B.C. ; Wee, A.T.S. 
46Sep-2004Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot studySeah, M.P.; Spencer, S.J.; Bensebaa, F.; Vickridge, I.; Danzebrink, H.; Krumrey, M.; Gross, T.; Oesterle, W.; Wendler, E.; Rheinländer, B.; Azuma, Y.; Kojima, I.; Suzuki, N.; Suzuki, M.; Tanuma, S.; Moon, D.W.; Lee, H.J.; Cho, H.M.; Chen, H.Y.; Wee, A.T.S. ; Osipowicz, T. ; Pan, J.S.; Jordaan, W.A.; Hauert, R.; Klotz, U.; Van Der Marel, C.; Verheijen, M.; Tamminga, Y.; Jeynes, C.; Bailey, P.; Biswas, S.; Falke, U.; Nguyen, N.V.; Chandler-Horowitz, D.; Ehrstein, J.R.; Muller, D.; Dura, J.A.
4720-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
4823-Mar-2006Cycloadditions on diamond (100) 2 × 1: Observation of lowered electron affinity due to hydrocarbon adsorptionOuyang, T.; Gao, X. ; Qi, D. ; Wee, A.T.S. ; Loh, K.P. 
492003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
50Aug-2001Degradation effect of a ZnO layer on ZnS: Comparison between a Monte Carlo simulation and experimental Auger and CL measurementsDong, G.; Liangzhen, C.; Rong, L.; Wee, A.T.S. 
512008Deoxidation of graphene oxide nanosheets to extended graphenites by "unzipping" eliminationChua, L.-L. ; Wang, S. ; Chia, P.-J. ; Chen, L. ; Zhao, L.-H.; Chen, W. ; Wee, A.T.-S. ; Ho, P.K.-H. 
522007Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
53Mar-2006Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy O2 + secondary-ion-mass spectrometryChanbasha, A.R.; Wee, A.T.S. 
541-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
552007Development of highly efficient and high speed X-ray detectors using modern nanomaterialsCholewa, M. ; Lau, S.P.; Xingyu, G. ; Wee, A.T.S. ; Polak, W.; Lekki, J.; Stachura, Z.; Moser, H.O. 
567-Nov-2008Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption studyGao, X. ; Chen, S. ; Liu, T. ; Chen, W. ; Wee, A.T.S. ; Nomoto, T.; Yagi, S.; Soda, K.; Yuhara, J.
572006Dopant activation in subamorphized silicon upon laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
582006Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Chong, Y.F.
59Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
6011-Dec-2000Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrixJie, Y.X. ; Xiong, Y.N.; Wee, A.T.S. ; Huan, C.H.A. ; Ji, W.