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|Title:||Dopant activation in subamorphized silicon upon laser annealing||Authors:||Ong, K.K.
|Issue Date:||2006||Citation:||Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F. (2006). Dopant activation in subamorphized silicon upon laser annealing. Applied Physics Letters 89 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335950||Abstract:||In this letter, the authors study the dopant activation and dopant distribution in a Si+ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si+ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96263||ISSN:||00036951||DOI:||10.1063/1.2335950|
|Appears in Collections:||Staff Publications|
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