Please use this identifier to cite or link to this item:
|Title:||Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry||Authors:||Chanbasha, A.R.
|Issue Date:||2007||Citation:||Chanbasha, A.R., Wee, A.T.S. (2007). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (1) : 277-285. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2429671||Abstract:||It is known that depth resolution can be improved by lowering the primary ion impact energy (Ep) and/or increasing the impact angle (θ) up to a critical θ, beyond which surface roughening ensues. However, lower Ep is accompanied by lower secondary ion yield, and for ultralow-energy Cs+ primary beam, a poorly focused beam. In this study, the authors subject a Ge delta-doped Si sample to ultralow-energy (||Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures||URI:||http://scholarbank.nus.edu.sg/handle/10635/96173||ISSN:||10711023||DOI:||10.1116/1.2429671|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 29, 2020
WEB OF SCIENCETM
checked on May 21, 2020
checked on May 30, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.