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Lee Sungjoo

rp01794

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Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

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Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-14 of 14 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
14-Jun-2008Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowireYang, W.F.; Lee, S.J. ; Liang, G.C. ; Whang, S.J. ; Kwong, D.L.
22004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
3Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
4Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
52008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
62007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
7Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
8Aug-2004N-type Schottky barrier source/drain MOSFET using Ytterbium silicideZhu, S. ; Chen, J. ; Li, M.-F. ; Lee, S.J. ; Singh, J.; Zhu, C.X. ; Du, A.; Tung, C.H.; Chin, A.; Kwong, D.L.
9Oct-2007NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectricChen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C. 
1025-Apr-2008Pt-germanide formed by laser annealing and its application for schottky source/drain metal-oxide-semiconductor field-effect transistor integrated with TaN/chemical vapor deposition HfO2/Ge gate stackLi, R.; Sung-Joo, L.E.E. ; Hong, M.-H. ; Chi, D.-Z.; Kwong, D.-L.
1117-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
122004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
13May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
14Nov-2008Temperature dependence of carrier transport of a silicon nanowire schottky-barrier field-effect transistorYang, W.F.; Lee, S.J. ; Liang, G.C. ; Eswar, R.; Sun, Z.Q.; Kwong, D.L.