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Chunxiang Zhu

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Chin, A.
Subject:  MOSFET

Results 1-10 of 10 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
1Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
2Dec-2003Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETsYu, D.S.; Wu, C.H.; Huang, C.H.; Chin, A.; Chen, W.J.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
3May-2003Fully silicided NiSi gate on La2O3 MOSFETsLin, C.Y.; Ma, M.W.; Chin, A.; Yeo, Y.C. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
4Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
5Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
6Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
7Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
8May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
9Jan-2006Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETsWang, X.P.; Li, M.-F. ; Ren, C.; Yu, X.F.; Shen, C.; Ma, H.H. ; Chin, A. ; Zhu, C.X. ; Ning, J.; Yu, M.B.; Kwong, D.-L.
10Nov-2007Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devicesWang, X.P.; Lim, A.E.-J.; Yu, H.Y.; Li, M.-F. ; Ren, C.; Loh, W.-Y.; Zhu, C.X. ; Chin, A. ; Trigg, A.D.; Yeo, Y.-C. ; Biesemans, S.; Lo, G.-Q.; Kwong, D.-L.