Please use this identifier to cite or link to this item:
|Title:||Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs||Authors:||Wang, X.P.
|Issue Date:||Jan-2006||Citation:||Wang, X.P., Li, M.-F., Ren, C., Yu, X.F., Shen, C., Ma, H.H., Chin, A., Zhu, C.X., Ning, J., Yu, M.B., Kwong, D.-L. (2006-01). Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs. IEEE Electron Device Letters 27 (1) : 31-33. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859950||Abstract:||Using a novel HfLaO gate dielectric for nMOSFETs with different La composition, we report for the first time that TaN (or HfN) effective metal gate work function can be tuned from Si mid-gap to the conduction band to fit the requirement of nMOSFETs. This is explained by the change of interface states and Fermi pinning level by adding La into HfO2. The superior performances of the nMOSFETs compared with those using pure HfO2 gate dielectric are also reported, in terms of higher crystallization temperature and higher drive current Id without sacrifice of very low gate leakage current, i.e. 5-6 orders reduction compared with SiO2 at the same equivalent oxide thickness of ∼1.2-1.8 nm. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83224||ISSN:||07413106||DOI:||10.1109/LED.2005.859950|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 23, 2020
WEB OF SCIENCETM
checked on May 15, 2020
checked on May 10, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.