Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.859950
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dc.titleTuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.-F.
dc.contributor.authorRen, C.
dc.contributor.authorYu, X.F.
dc.contributor.authorShen, C.
dc.contributor.authorMa, H.H.
dc.contributor.authorChin, A.
dc.contributor.authorZhu, C.X.
dc.contributor.authorNing, J.
dc.contributor.authorYu, M.B.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:38:45Z
dc.date.available2014-10-07T04:38:45Z
dc.date.issued2006-01
dc.identifier.citationWang, X.P., Li, M.-F., Ren, C., Yu, X.F., Shen, C., Ma, H.H., Chin, A., Zhu, C.X., Ning, J., Yu, M.B., Kwong, D.-L. (2006-01). Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs. IEEE Electron Device Letters 27 (1) : 31-33. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859950
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83224
dc.description.abstractUsing a novel HfLaO gate dielectric for nMOSFETs with different La composition, we report for the first time that TaN (or HfN) effective metal gate work function can be tuned from Si mid-gap to the conduction band to fit the requirement of nMOSFETs. This is explained by the change of interface states and Fermi pinning level by adding La into HfO2. The superior performances of the nMOSFETs compared with those using pure HfO2 gate dielectric are also reported, in terms of higher crystallization temperature and higher drive current Id without sacrifice of very low gate leakage current, i.e. 5-6 orders reduction compared with SiO2 at the same equivalent oxide thickness of ∼1.2-1.8 nm. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.859950
dc.sourceScopus
dc.subjectHfLaO
dc.subjectHigh-κ dielectric
dc.subjectMetal gate
dc.subjectMOSFET
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.859950
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue1
dc.description.page31-33
dc.description.codenEDLED
dc.identifier.isiut000234397800011
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