1. ScholarBank@NUS

Chunxiang Zhu

rp01634

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Refined By:
Author:  Zhu, C.X.
Department:  COLLEGE OF DESIGN AND ENGINEERING
Type:  Conference Paper

Results 1-20 of 65 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
120043D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOSYu, D.S.; Chin, A. ; Laio, C.C.; Lee, C.F.; Cheng, C.F.; Chen, W.J.; Zhu, C. ; Li, M.-F. ; Yoo, W.J. ; McAlister, S.P.; Kwong, D.L.
22004A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectricsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Li, M.F. ; Cho, B.J. ; Chin, A.; Kwong, D.-L.
32005A new gate dielectric HfLaO with metal gate work function tuning capability and superior NMOSFETs performanceWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C. ; Chi, R.; Yu, X.F.; Shen, C.; Du, A.Y.; Chan, D.S.H. ; Kwong, D.-L.
42007A novel high-k gate dielectric HfLaO for next generation CMOS technologyLi, M.-F. ; Wang, X.P.; Yu, H.Y.; Zhu, C.X. ; Chin, A.; Du, A.Y.; Shao, J.; Lu, W.; Shen, X.C.; Liu, P.; Hung, S.; Lo, P.; Kwong, D.L.
52004A novel program-erasable capacitor using high-κ AlN dielectricLai, C.H.; Ma, M.W.; Cheng, C.F.; Chin, A.; McAlister, S.P.; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.
62004A novel program-erasable high-κ AlN capacitor with memory functionChin, A. ; Lai, C.H.; Hung, B.F.; Cheng, C.F.; McAlister, S.P.; Zhu, C. ; Li, M.-F. ; Kwong, D.-L.
72004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
82005A simple CMOS self-aligned double-gate poly-Si TFT technologyXiong, Z.; Liu, H.; Zhu, C. ; Sin, J.K.O.
92006A simulation study of FIBL in Ge MOSFETs with high-k gate dielectricsTan, Y.P.; James, M.-K.L.; Zhang, Q.; Wu, N.; Zhu, C. 
102004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, C.H.; Lee, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
112006A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrateTan, Y.P.; Ling, Q.D. ; Teo Eric, Y.H.; Song, Y.; Lim, S.L.; Lo Patrick, G.Q.; Kang, E.T. ; Zhu, C. ; Chan, D.S.H. 
122005Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power applicationYu, X.; Zhu, C. ; Yu, M.; Li, M.F. ; Chin, A.; Tung, C.H.; Gui, D.; Kwong, D.-L.
132004Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnectsNgwan, V.C.; Zhu, C. ; Krishnamoorthy, A.
142008Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectricXie, R.; Wu, N.; Shen, C.; Zhu, C. 
152006Bi-stable state for WORM application based on carbazole-containing polymerTeo, E.Y.H. ; Ling, Q. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
162008Bistable electrical switching and rewritable memory effect in a thin film acrylate copolymer containing carbazole-oxadiazole donor-acceptor pendant groupsTeo, E.Y.H. ; Ling, Q.D.; Lim, S.L.; Neoh, K.G.; Kang, E.T.; Chan, D.S.H. ; Zhu, C.X. 
172005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
182009Development and characterization of high-k gate stack for Ge MOSFETsXie, R.; Zhu, C. 
192005Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxidesSamanta, P.; Man, T.Y.; Chan, A.C.K.; Zhang, Q.; Zhu, C. ; Chan, M.
202007Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gateYu, X.; Yu, M.; Zhu, C.