Please use this identifier to cite or link to this item:
|Title:||Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric||Authors:||Xie, R.
|Issue Date:||2008||Citation:||Xie, R., Wu, N., Shen, C., Zhu, C. (2008). Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectric. ECS Transactions 16 (10) : 175-180. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2986766||Abstract:||In this work, a simple model, with a higher interface trap density in the upper half of Ge bandgap than that in the lower half, is proposed to explain the abnormal behaviors in Capacitance-Voltage characteristics of both p- and n-MOS capacitors on Ge substrate using different surface passivation. Variable rise/fall-time charging pumping measurement is used to study the energy distribution of interface trap density in HfO2 gated Ge MOSFETs. Our results reveal that Dit is higher in the upper half of the Ge bandgap than that in the lower half of the bandgap. These results are also consistent with the observation that n-channel mobility is more severely degraded compared to p-channel for Ge MOSFET. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83500||ISBN:||9781566776561||ISSN:||19385862||DOI:||10.1149/1.2986766|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 16, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.