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|Title:||Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides||Authors:||Samanta, P.
|Issue Date:||2005||Citation:||Samanta, P.,Man, T.Y.,Chan, A.C.K.,Zhang, Q.,Zhu, C.,Chan, M. (2005). Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides. IEEE International Reliability Physics Symposium Proceedings : 594-595. ScholarBank@NUS Repository.||Abstract:||Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO2) films. © 2005 IEEE.||Source Title:||IEEE International Reliability Physics Symposium Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/83635||ISBN:||0780388038||ISSN:||15417026|
|Appears in Collections:||Staff Publications|
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