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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 21-40 of 218 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
212004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, C.H.; Lee, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
227-Jun-2014A work-function tunable polyelectrolyte complex (PEI:PSS) as a cathode interfacial layer for inverted organic solar cellsLin, Z.; Chang, J.; Zhang, J.; Jiang, C.; Wu, J. ; Zhu, C. 
232006A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrateTan, Y.P.; Ling, Q.D. ; Teo Eric, Y.H.; Song, Y.; Lim, S.L.; Lo Patrick, G.Q.; Kang, E.T. ; Zhu, C. ; Chan, D.S.H. 
24Jun-2006Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power applicationYu, X.; Yu, M.; Zhu, C. 
252005Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power applicationYu, X.; Zhu, C. ; Yu, M.; Li, M.F. ; Chin, A.; Tung, C.H.; Gui, D.; Kwong, D.-L.
26Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
271-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
282009An organic-based diode-memory device with rectifying property for crossbar memory array applicationsTeo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
292004Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnectsNgwan, V.C.; Zhu, C. ; Krishnamoorthy, A.
3022-Apr-2019Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic ApplicationWang, Lin ; Liao, Wugang ; Wong, Swee Hang; Yu, Zhi Gen; Li, Sifan; Lim, Yee-Fun; Feng, Xuewei ; Tan, Wee Chong ; Huang, Xin ; Chen, Li; Liu, Liang ; Chen, Jingsheng ; Gong, Xiao ; Zhu, Chunxiang ; Liu, Xinke ; Zhang, Yong-Wei ; Chi, Dongzhi; Ang, Koh-Wee
112008Asymmetric energy distribution of interface traps in germanium MOSFETs with HfO2 gate dielectricXie, R.; Wu, N.; Shen, C.; Zhu, C. 
12Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
132005Atomic-layer-deposited Al2O3-HfO2-Al 2O3 dielectrics for metal-insulator-metal capacitor applicationsDing, S.-J.; Zhu, C. ; Li, M.-F. ; Zhang, D.W.
142006Bi-stable state for WORM application based on carbazole-containing polymerTeo, E.Y.H. ; Ling, Q. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
152008Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline compositeLi, L. ; Ling, Q.-D. ; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
162009Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complexLiu, G. ; Zhuang, X.; Chen, Y.; Zhang, B.; Zhu, J.; Zhu, C.-X. ; Neoh, K.-G. ; Kang, E.-T. 
1730-Nov-2006Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexesLing, Q.-D. ; Wang, W.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
182008Bistable electrical switching and rewritable memory effect in a thin film acrylate copolymer containing carbazole-oxadiazole donor-acceptor pendant groupsTeo, E.Y.H. ; Ling, Q.D.; Lim, S.L.; Neoh, K.G.; Kang, E.T.; Chan, D.S.H. ; Zhu, C.X. 
192007Bistable electrical switching and write-once read-many-times memory effect in a donor-acceptor containing polyfluorene derivative and its carbon nanotube compositesLiu, G. ; Ling, Q.-D. ; Kang, E.-T. ; Neoh, K.-G. ; Liaw, D.-J.; Chang, F.-C.; Zhu, C.-X. ; Chan, D.S.-H. 
202005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.