Please use this identifier to cite or link to this item: https://doi.org/10.1002/adfm.201901106
Title: Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application
Authors: Wang, Lin 
Liao, Wugang 
Wong, Swee Hang
Yu, Zhi Gen
Li, Sifan
Lim, Yee-Fun
Feng, Xuewei 
Tan, Wee Chong 
Huang, Xin 
Chen, Li
Liu, Liang 
Chen, Jingsheng 
Gong, Xiao 
Zhu, Chunxiang 
Liu, Xinke 
Zhang, Yong-Wei 
Chi, Dongzhi
Ang, Koh-Wee
Keywords: artificial synapses
memtransistor
MoS2
neuromorphic computing
Issue Date: 22-Apr-2019
Publisher: Wiley-VCH Verlag
Citation: Wang, Lin, Liao, Wugang, Wong, Swee Hang, Yu, Zhi Gen, Li, Sifan, Lim, Yee-Fun, Feng, Xuewei, Tan, Wee Chong, Huang, Xin, Chen, Li, Liu, Liang, Chen, Jingsheng, Gong, Xiao, Zhu, Chunxiang, Liu, Xinke, Zhang, Yong-Wei, Chi, Dongzhi, Ang, Koh-Wee (2019-04-22). Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application. ADVANCED FUNCTIONAL MATERIALS 29 (25). ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.201901106
Abstract: Neuromorphic computing, which emulates the biological neural systems could overcome the high-power consumption issue of conventional von-Neumann computing. State-of-the-art artificial synapses made of two-terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor-based arti?cial synapse is realized by integrating a memristor and selector transistor into a multiterminal device using monolayer polycrys-talline-MoS2 grown by a scalable chemical vapor deposition (CVD) process. Notably, the memtransistor offers both drain- and gate-tunable nonvolatile memory functions, which efficiently emulates the long-term potentiation/depression, spike-amplitude, and spike-timing-dependent plasticity of biological synapses. Moreover, the gate tunability function that is not achievable in two-terminal memristors, enables significant bipolar resistive states switching up to four orders-of-magnitude and high cycling endurance. First-principles calculations reveal a new resistive switching mechanism driven by the diffusion of double sulfur vacancy perpendicular to the MoS2 grain boundary, leading to a conducting switching path without the need for a filament forming process. The seamless integration of multiterminal memtransistors may offer another degree-of-freedom to tune the synaptic plasticity by a third gate terminal for enabling complex neuromorphic learning. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Source Title: ADVANCED FUNCTIONAL MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/168677
ISSN: 1616301X
DOI: 10.1002/adfm.201901106
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