Please use this identifier to cite or link to this item:
|Title:||Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application||Authors:||Yu, X.
|Keywords:||High-κ gate dielectric
Interface-state density (Dit)
|Issue Date:||Jun-2006||Citation:||Yu, X., Yu, M., Zhu, C. (2006-06). Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application. IEEE Electron Device Letters 27 (6) : 498-501. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.875722||Abstract:||A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81940||ISSN:||07413106||DOI:||10.1109/LED.2006.875722|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 8, 2020
WEB OF SCIENCETM
checked on Mar 16, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.