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https://doi.org/10.1109/LED.2006.875722
Title: | Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application | Authors: | Yu, X. Yu, M. Zhu, C. |
Keywords: | High-κ gate dielectric Interface-state density (Dit) Metal gate Mobility MOSFETs Tthermal stability |
Issue Date: | Jun-2006 | Citation: | Yu, X., Yu, M., Zhu, C. (2006-06). Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application. IEEE Electron Device Letters 27 (6) : 498-501. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.875722 | Abstract: | A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application. © 2006 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/81940 | ISSN: | 07413106 | DOI: | 10.1109/LED.2006.875722 |
Appears in Collections: | Staff Publications |
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