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|Title:||Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application||Authors:||Yu, X.
|Keywords:||High-κ gate dielectric
Interface-state density (Dit)
|Issue Date:||Jun-2006||Citation:||Yu, X., Yu, M., Zhu, C. (2006-06). Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application. IEEE Electron Device Letters 27 (6) : 498-501. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.875722||Abstract:||A novel HfTaON/SiO2 gate stack has been investigated for low-standby-power (LSTP) CMOS application. This gate stack exhibited good physical and electrical characteristics, including good thermal stability up to 1000 °C low gate-leakage current, excellent interface properties, and superior electron and hole mobility (100% and 96% of universal curves at 0.8 MV/cm). The excellent characteristics observed in HfTaON/SiO2 suggest that it may be a very promising gate stack for advanced LSTP CMOS application. © 2006 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/81940||ISSN:||07413106||DOI:||10.1109/LED.2006.875722|
|Appears in Collections:||Staff Publications|
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