Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
 
 
Email
elelimf@nus.edu.sg
 

Refined By:
Subject:  Reliability

Results 1-10 of 10 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1Jan-2006A fast measurement technique of MOSFET Id-Vg characteristicsShen, C.; Li, M.-F. ; Wang, X.P.; Yeo, Y.-C. ; Kwong, D.-L.
2May-2001Analysis of the DCIV peaks in electrically stressed pMOSFETsJie, B.B.; Chim, W.K. ; Li, M.-F. ; Lo, K.F.
3Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
4Nov-2004Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetimeLi, M.F. ; Chen, G.; Shen, C.; Wang, X.P.; Yu, H.Y. ; Yeo, Y.-C. ; Kwong, D.L.
5Dec-2006Fast Vth instability in HfO2 gate dielectric MOSFETs and its impact on digital circuitsShen, C.; Yang, T.; Li, M.-F. ; Wang, X.; Foo, C.E.; Samudra, G.S. ; Yeo, Y.-C. ; Kwong, D.-L.
6May-2001Interface traps at high doping drain extension region in sub-0.25-μm MOSTsChen, G.; Li, M.F. ; Yu, X.
7Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
8Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
9Dec-2011Some issues in advanced CMOS gate stack performance and reliabilityLi, M.-F. ; Wang, X.P.; Shen, C.; Yang, J.J.; Chen, J.D. ; Yu, H.Y.; Zhu, C. ; Huang, D.
10Mar-2008Understand NBTI mechanism by developing novel measurement techniquesLi, M.-F. ; Huang, D.; Shen, C.; Yang, T.; Liu, W.J.; Liu, Z.