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|Title:||Analysis of the DCIV peaks in electrically stressed pMOSFETs||Authors:||Jie, B.B.
|Issue Date:||May-2001||Citation:||Jie, B.B.,Chim, W.K.,Li, M.-F.,Lo, K.F. (2001-05). Analysis of the DCIV peaks in electrically stressed pMOSFETs. IEEE Transactions on Electron Devices 48 (5) : 913-920. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918239||Abstract:||This paper presents the effects of Fowler-Nordheim (FN) and hot-carrier (HC) stress in the direct-current current-voltage (DCIV) measurements. The effects of interface trapped charge on DCIV curves is reported. Stress-induced oxide charge shifts the DCIV peaks, while stress-induced interface trapped charge causes a spread in the DCIV peaks. It is found that under HC stress, when the absolute value of stress gate voltage changes from low to high, the interface trap spatial location moves from the drain region to the channel region. It is inferred that the generation of oxide charge in the drain region is a two-step process. For short stress times, electrons mainly fill the process-induced neutral oxide traps, while for long stress times, electrons fill the stress created electron traps.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/55095||ISSN:||00189383||DOI:||10.1109/16.918239|
|Appears in Collections:||Staff Publications|
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