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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 41-60 of 300 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
411997Analysis of optical gain of strained wurtzite InxGa1-xN/GaN quantum well lasersChong, T.C. ; Yeo, Y.C. ; Li, M.F. ; Fan, W.J.
42May-2001Analysis of the DCIV peaks in electrically stressed pMOSFETsJie, B.B.; Chim, W.K. ; Li, M.-F. ; Lo, K.F.
432000Annealing behavior of gate oxide leakage current after quasi-breakdownXu, Z.; Cho, B.J. ; Li, M.F. 
44Mar-2006Atomic layer deposited high-κ films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applicationsZhu, C. ; Cho, B.-J. ; Li, M.-F. 
452005Atomic-layer-deposited Al2O3-HfO2-Al 2O3 dielectrics for metal-insulator-metal capacitor applicationsDing, S.-J.; Zhu, C. ; Li, M.-F. ; Zhang, D.W.
46Feb-1996Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxNFan, W.J.; Li, M.F. ; Chong, T.C. ; Xia, J.B.
472001Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
482009Boundary condition and initial value effects in the reaction-diffusion model of interface trap generation/recoveryLuo, Y.; Huang, D.; Liu, W.; Li, M. 
492005BTI and charge trapping in germanium p- And n-MOSFETs with CVD HfO 2 gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Balasubramanian, N.
502007Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
51Nov-2007Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
521995Carrier concentration saturation in n type AlxGa1-xAsDu, A.Y.; Li, M.F. ; Chong, T.C. ; Chua, S.J. 
531998Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance TechniquesLi, M.-f. ; Yu, P.Y.
542008Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxidesLiu, W.J.; Liu, Z.Y.; Luo, Y.; Jiao, G.F.; Huang, X.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
552004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
562006Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectricShen, C.; Li, M.-F. ; Foo, C.E.; Yang, T.; Huang, D.M.; Yaps, A.; Samudra, G.S. ; Yeo, Y.-C. 
571999Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scatteringHou, Y.T. ; Feng, Z.C.; Li, M.F. ; Chua, S.J. 
58Dec-2004Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separationLoh, W.-Y. ; Cho, B.J. ; Joo, M.S. ; Li, M.-F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
592003CMOS transconductor design for VHF filtering applicationsZhenying, L.; Li, M.F. ; Lian, Y. ; Rustagi, S.C.
601994Comment on "direct evidence for the negative-U nature of the DX center in AlxGa1-xAs"Li, M.F. ; Du, A.Y.; Luo, Y.Y.; Chua, S.J.