Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering

Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I

Title:	Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering
Authors:	Hou, Y.T. Feng, Z.C. Li, M.F. Chua, S.J.
Issue Date:	1999
Citation:	Hou, Y.T.,Feng, Z.C.,Li, M.F.,Chua, S.J. (1999). Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering. Surface and Interface Analysis 28 (1) : 163-165. ScholarBank@NUS Repository. https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I
Abstract:	Molecular beam epitaxy (MBE)-grown ternary Ga1-xAlxAs films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced by alloy disorder are simulated using the spatial correlation model. The obtained correlation length for GaAs-like and AlAs-like modes are observed to decrease as the reduction of Ga composition 1-x and Al composition x, respectively. It is also shown that the correlation length depends sensitively on the composition. No significant temperature or phonon mode dependence is found. A combination with thermodynamic analysis suggests that the random compositional distribution in alloy seems to be the dominant contribution to this disorder effect.
Source Title:	Surface and Interface Analysis
URI:	http://scholarbank.nus.edu.sg/handle/10635/80321
ISSN:	01422421
DOI:	10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I
Appears in Collections:	Staff Publications

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