Please use this identifier to cite or link to this item:
https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I
| DC Field | Value | |
|---|---|---|
| dc.title | Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering | |
| dc.contributor.author | Hou, Y.T. | |
| dc.contributor.author | Feng, Z.C. | |
| dc.contributor.author | Li, M.F. | |
| dc.contributor.author | Chua, S.J. | |
| dc.date.accessioned | 2014-10-07T02:56:15Z | |
| dc.date.available | 2014-10-07T02:56:15Z | |
| dc.date.issued | 1999 | |
| dc.identifier.citation | Hou, Y.T.,Feng, Z.C.,Li, M.F.,Chua, S.J. (1999). Characterization of MBE-grown Ga1-xAlxAs alloy films by Raman scattering. Surface and Interface Analysis 28 (1) : 163-165. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I</a> | |
| dc.identifier.issn | 01422421 | |
| dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/80321 | |
| dc.description.abstract | Molecular beam epitaxy (MBE)-grown ternary Ga1-xAlxAs films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced by alloy disorder are simulated using the spatial correlation model. The obtained correlation length for GaAs-like and AlAs-like modes are observed to decrease as the reduction of Ga composition 1-x and Al composition x, respectively. It is also shown that the correlation length depends sensitively on the composition. No significant temperature or phonon mode dependence is found. A combination with thermodynamic analysis suggests that the random compositional distribution in alloy seems to be the dominant contribution to this disorder effect. | |
| dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I | |
| dc.source | Scopus | |
| dc.type | Article | |
| dc.contributor.department | ELECTRICAL ENGINEERING | |
| dc.description.doi | 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-I | |
| dc.description.sourcetitle | Surface and Interface Analysis | |
| dc.description.volume | 28 | |
| dc.description.issue | 1 | |
| dc.description.page | 163-165 | |
| dc.description.coden | SIAND | |
| dc.identifier.isiut | NOT_IN_WOS | |
| Appears in Collections: | Staff Publications | |
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