Please use this identifier to cite or link to this item:
|Title:||Analysis of optical gain of strained wurtzite InxGa1-xN/GaN quantum well lasers||Authors:||Chong, T.C.
|Issue Date:||1997||Citation:||Chong, T.C.,Yeo, Y.C.,Li, M.F.,Fan, W.J. (1997). Analysis of optical gain of strained wurtzite InxGa1-xN/GaN quantum well lasers. Materials Research Society Symposium - Proceedings 482 : 1119-1124. ScholarBank@NUS Repository.||Abstract:||The valence subband structures, density-of-states, and optical gain of (0001) wurtzite (WZ) InxGa1-xN/GaN quantum wells (QWs) are studied using a numerical approach without analytical approximations. We used the effective-mass parameters of GaN and InN derived using the Empirical Pseudopotential Method. By varying the well width and mole fraction of In in the well material, the effects of quantum confinement and compressive strain are studied. A narrower well width and a higher In mole fraction in the well lead to TE enhancement and TM suppression of the optical gain. From the relationship between the optical gain and the radiative current density, we obtain the transparent current density for a single QW to be 200 A/cm2. Further, we analyze the InxGa1-xN/GaN/AlGaN separate confinement heterostructure multiple-QW laser structure. It is shown that a suitable combination of well width and number of QWs should be selected in optimizing the threshold current density in such MQW lasers.||Source Title:||Materials Research Society Symposium - Proceedings||URI:||http://scholarbank.nus.edu.sg/handle/10635/81377||ISSN:||02729172|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 17, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.