Please use this identifier to cite or link to this item:
|Title:||Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN||Authors:||Fan, W.J.
D. electronic band structure
|Issue Date:||Feb-1996||Citation:||Fan, W.J., Li, M.F., Chong, T.C., Xia, J.B. (1996-02). Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN. Solid State Communications 97 (5) : 381-384. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1098(95)00700-8||Abstract:||The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Γ and those of the conduction band at Γ and X are obtained. The energies of Γ, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.||Source Title:||Solid State Communications||URI:||http://scholarbank.nus.edu.sg/handle/10635/80305||ISSN:||00381098||DOI:||10.1016/0038-1098(95)00700-8|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 22, 2020
WEB OF SCIENCETM
checked on May 13, 2020
checked on May 10, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.