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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 261-280 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
2612005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
262Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
263Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
2642009Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methodsLiu, W.J.; Huang, D.; Sun, Q.Q.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
2651999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong
61997Study on excitonic absorptions in wurztite GaN by photovoltaic spectra at room temperatureLiu, W.; Li, M.F. ; Chua, S.J. ; Zhang, Y.H. ; Uchida, K.
7Nov-2006Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitorXiong, Y.-Z.; Yu, M.-B.; Lo, G.-Q.; Li, M.-F. ; Kwong, D.-L.
83-Apr-2006Surface NH 3 anneal on strained Si 0.5Ge 0.5 for metal-oxide-semiconductor applications with HfO 2 as gate dielectricHuang, J.; Wu, N.; Zhang, Q.; Zhu, C. ; Li, M.F. ; Tay, A.A.O. ; Cheng, Z.-Y.; Leitz, C.W.; Lochtefeld, A.
892004TDDB characteristics of ultra-thin HfN/HfO2 gate stackYang, H.; Sa, N.; Tang, L.; Liu, X.; Kang, J.; Han, R.; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
90Jun-2005The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETsYu, D.S.; Liao, C.C.; Cheng, C.F.; Chin, A. ; Li, M.F. ; McAlister, S.P.
912007The physical origins of fast and slow components in NBTI degradation for p-MOS transistors with SiON gate dielectricLi, M.-F. ; Shen, C.; Yang, T.; Chen, G.; Huang, D.
9215-Jun-1998The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structuresLiu, W.; Teo, K.L. ; Li, M.F. ; Chua, S.J. ; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.
9315-Jun-1997Theoretical study of the energy-band structure of partially CuPt-ordered Ga0.5In0.5PYeo, Y.C. ; Li, M.F. ; Chong, T.C. ; Yu, P.Y.
944-Nov-2002Thermal stability of (HfO2)x(Al2O 3)1-x on SiYu, H.Y. ; Wu, N.; Li, M.F. ; Zhu, C. ; Cho, B.J. ; Kwong, D.-L.; Tung, C.H.; Pan, J.S.; Chai, J.W.; Wang, W.D.; Chi, D.Z.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
951-Mar-2004Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputteringKang, J.F. ; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Hu, H.; Lim, H.F. ; Wang, W.D.; Gui, D.; Kwong, D.-L.
96Apr-2004Thermally robust HfN metal as a promising gate electrode for advanced MOS device applicationsYu, H.Y. ; Li, M.-F. ; Kwong, D.-L.
972003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.
98Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.
992005Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancementAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Wang, Y.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
100Feb-2005Three-dimensional metal gate-high-Κ-GOI CMOSFETs on 1-poly-6-metal 0.18-μm Si devicesYu, D.S.; Chin, A. ; Liao, C.C.; Lee, C.F.; Cheng, C.F.; Li, M.F. ; Yoo, W.J. ; McAlister, S.P.