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|Title:||Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering||Authors:||Kang, J.F.
|Issue Date:||1-Mar-2004||Citation:||Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L. (2004-03-01). Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering. Applied Physics Letters 84 (9) : 1588-1590. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1651652||Abstract:||The thermal stability of nitrogen in physical vapor deposited (PVD) HfO xN y gate dielectrics with different nitrogen concentrations was investigated. X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization techniques were used for the investigation. The excellent electrical stability of reactive sputtered HfO xN y gate dielectrics during the post deposition annealing was due to nitrogen which at the HfO xN y/Si interface formed N-Si bonds. The results show that during the postdeposition annealing the bulk Hf-N bonds in the reactive-sputtered HfO xN y are not stable and can be easily replaced by oxygen.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83193||ISSN:||00036951||DOI:||10.1063/1.1651652|
|Appears in Collections:||Staff Publications|
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