Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1651652
Title: Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
Authors: Kang, J.F. 
Yu, H.Y. 
Ren, C.
Li, M.-F. 
Chan, D.S.H. 
Hu, H.
Lim, H.F. 
Wang, W.D.
Gui, D.
Kwong, D.-L.
Issue Date: 1-Mar-2004
Citation: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L. (2004-03-01). Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering. Applied Physics Letters 84 (9) : 1588-1590. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1651652
Abstract: The thermal stability of nitrogen in physical vapor deposited (PVD) HfO xN y gate dielectrics with different nitrogen concentrations was investigated. X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization techniques were used for the investigation. The excellent electrical stability of reactive sputtered HfO xN y gate dielectrics during the post deposition annealing was due to nitrogen which at the HfO xN y/Si interface formed N-Si bonds. The results show that during the postdeposition annealing the bulk Hf-N bonds in the reactive-sputtered HfO xN y are not stable and can be easily replaced by oxygen.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83193
ISSN: 00036951
DOI: 10.1063/1.1651652
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