Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1651652
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dc.titleThermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
dc.contributor.authorKang, J.F.
dc.contributor.authorYu, H.Y.
dc.contributor.authorRen, C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorHu, H.
dc.contributor.authorLim, H.F.
dc.contributor.authorWang, W.D.
dc.contributor.authorGui, D.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:38:23Z
dc.date.available2014-10-07T04:38:23Z
dc.date.issued2004-03-01
dc.identifier.citationKang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L. (2004-03-01). Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering. Applied Physics Letters 84 (9) : 1588-1590. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1651652
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83193
dc.description.abstractThe thermal stability of nitrogen in physical vapor deposited (PVD) HfO xN y gate dielectrics with different nitrogen concentrations was investigated. X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization techniques were used for the investigation. The excellent electrical stability of reactive sputtered HfO xN y gate dielectrics during the post deposition annealing was due to nitrogen which at the HfO xN y/Si interface formed N-Si bonds. The results show that during the postdeposition annealing the bulk Hf-N bonds in the reactive-sputtered HfO xN y are not stable and can be easily replaced by oxygen.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1651652
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1651652
dc.description.sourcetitleApplied Physics Letters
dc.description.volume84
dc.description.issue9
dc.description.page1588-1590
dc.description.codenAPPLA
dc.identifier.isiut000189264100052
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