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|Title:||The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs||Authors:||Yu, D.S.
|Keywords:||Bias-temperature instability (BTI)
|Issue Date:||Jun-2005||Citation:||Yu, D.S., Liao, C.C., Cheng, C.F., Chin, A., Li, M.F., McAlister, S.P. (2005-06). The effect of IrO2-IrO2- Hf-LaAlO3 gate dielectric on the bias-temperature instability of 3-D GOI CMOSFETs. IEEE Electron Device Letters 26 (6) : 407-409. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848130||Abstract:||We have studied the bias-temperature instability of three-dimensional self-aligned metal-gate/high-Κ/Germanium-on-insulator (GOI) CMOSFETs, which were integrated on underlying 0.18 μm CMOSFETs. The devices used IrO2-IrO2-Hf dual gates and a high-Κ LaAiO3 gate dielectric, and gave an equivalent-oxide thickness (EOT) of 1.4 mn. The metal-gate/high-Κ/GOI p-and n-MOSFETs displayed threshold voltage (Vt) shifts of 30 and 21 mV after 10 MV/cm, 85 °C stress for 1 h, comparable with values for the control two-dimensional (2-D) metal-gate/high-Κ-Si CMOSFETs. An extrapolated maximum voltage of - 1.2 and 1.4 V for a ten-year lifetime was obtained from the bias-temperature stress measurements on the GOI CMOSFETs. © 2005 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83161||ISSN:||07413106||DOI:||10.1109/LED.2005.848130|
|Appears in Collections:||Staff Publications|
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