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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Results 121-140 of 268 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1212009Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channelsMa, F.-J. ; Rustagi, S.C.; Zhao, H.; Samudra, G.S. ; Singh, N.; Budhaaraju, K.D.; Lo, G.Q.; Kwong, D.L.
122Jul-2010Modeling of stress-retarded thermal oxidation of nonplanar silicon structures for realization of nanoscale devicesMa, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Zhao, H.; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
1232006Modeling study of InSb thin film for advanced III-V MOSFET applicationsZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
124Nov-2005Modeling study of the impact of surface roughness on silicon and germanium UTB MOSFETsLow, T.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Kwong, D.-L.
1252012Modelling and simulation of field-effect surface passivation of crystalline silicon-based solar cellsMa, F.-J. ; Hoex, B. ; Samudra, G.S. ; Aberle, A.G. 
1262013Modelling of temperature dependence on current collapse phenomenon in AlGaN/GaN HEMT devicesSamudra, G.S. ; Liang, Y.C. ; Li, Y.; Yeo, Y.-C. 
1272000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
1282000Modelling of the "Gated-diode" configuration in bulk MOSFET'sYip, A.; Yeow, Y.T.; Samudra, G.S. ; Ling, C.H. 
129Feb-2000Modelling of transconductance-to-current ratio (gm/ID) analysis on double-gate SOI MOSFETsRajendran, K. ; Samudra, G.S. 
130Dec-2013Modelling temperature dependence on AlGaN/GaN power HEMT device characteristicsWang, Y.-H.; Liang, Y.C. ; Samudra, G.S. ; Chang, T.-F.; Huang, C.-F.; Yuan, L.; Lo, G.-Q.
1312005Modelling, analysis and design of cascaded forward and interleaved converter for powering future microprocessorsSingh, R.P.; Khambadkone, A.M. ; Samudra, G.S. ; Liang, Y.C. 
132Aug-2008Modification of molybdenum gate electrode work function via (La-, Al-Induced) dipole effect at High-κ/SiO2 interfaceLim, A.E.-J.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C. 
1331-Feb-1996MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuitsSamudra, G. ; Lee, T.K.
1341-Feb-1996MOS device conductance modelling technique for an accurate and efficient mixed-mode simulation of CMOS circuitsSamudra, G. ; Lee, T.K.
1352001MOS-controlled smart power synchronous rectifierLiang, Y.C. ; Lim, C.-Y.; Samudra, G.S. 
136Nov-2007N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layerLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
137Feb-2007N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicideLee, R.T.P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Lo, G.-Q.; Samudra, G.S. ; Chi, D.Z.; Yeo, Y.-C. 
1382008N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxyKoh, S.-M.; Sekar, K.; Lee, D.; Krull, W.; Wang, X.; Samudra, G.S. ; Yeo, Y.-C. 
139Feb-2007n-MOSFET with silicon-carbon source/drain for enhancement of carrier transportChui, K.-J.; Ang, K.-W.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
1402008N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivationChin, H.-C.; Zhu, M. ; Samudra, G.S. ; Yeo, Y.-C.