Please use this identifier to cite or link to this item:
Title: Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics
Authors: Wang, Y.-H.
Liang, Y.C. 
Samudra, G.S. 
Chang, T.-F.
Huang, C.-F.
Yuan, L.
Lo, G.-Q.
Issue Date: Dec-2013
Citation: Wang, Y.-H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F., Yuan, L., Lo, G.-Q. (2013-12). Modelling temperature dependence on AlGaN/GaN power HEMT device characteristics. Semiconductor Science and Technology 28 (12) : -. ScholarBank@NUS Repository.
Abstract: This paper reports extensive modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate flat-band Schottky barrier height, energy band Fermi-level (EC-EF) at the AlGaN/GaN interface, two-dimensional electron gas sheet density, gate threshold and (I D-VG) at sub-threshold voltages, and drain current-voltage (ID-VD) characteristics under various high-temperature conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high-temperature operation. © 2013 IOP Publishing Ltd.
Source Title: Semiconductor Science and Technology
ISSN: 02681242
DOI: 10.1088/0268-1242/28/12/125010
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Jan 30, 2023


checked on Jan 30, 2023

Page view(s)

checked on Feb 2, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.