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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2009]
Date Issued:  2007
Type:  Conference Paper

Results 1-20 of 25 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12007A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistorsTan, K.-M.; Zhu, M. ; Fang, W.-W.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
22007A strained N-channel impact-ionization MOS (I-MOS) transistor with elevated silicon-carbon source/drain for performance enhancementToh, E.-H.; Wang, G.H.; Lo, G.-Q.; Choy, S.-F.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
32007Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETsAng, K.-W.; Lin, J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
42007Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regionsAng, K.-W.; Chin, H.-C.; Chui, K.-J.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
52007Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressorsAng, K.-W.; Chui, K.-J.; Tung, C.-H.; Samudra, G. ; Balasubramanian, N.; Yeo, Y.-C. 
62007Enhanced performance in strained n-FET with double-recessed Si:C source/drain and lattice-mismatched SiGe strain-transfer structure (STS)Ang, K.-W.; Wong, H.-S.; Balasubramanian, N.; Samudra, G. ; Yeo, Y.-C. 
72007Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealingWang, G.H.; Toh, E.-H.; Tung, C.-H.; Foo, Y.-L.; Tripathy, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
82007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
92007Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swingToh, E.-H.; Wang, G.H.; Zhu, M. ; Shen, C.; Chan, L.; Lo, G.-Q.; Tung, C.-H.; Sylvester, D.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
102007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
112007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
122007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
132007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
142007On the performance limit of impact-ionization transistorsShen, C.; Lin, J.-Q.; Toh, E.-H.; Chang, K.-F.; Bait, P.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
152007Progression of superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. ; Feng, H.
162007Realistic simulation of reverse characteristics of 4H-SIC power DiodeWei, G.; Liang, Y.C. ; Samudra, G.S. 
172007Route to low parasitic resistance in MuGFETs with silicon-carbon source/drain: Integration of novel low barrier Ni(M)Si:C metal silicides and pulsed laser annealingLee, R.T.-P. ; Koh, A.T.-Y.; Liu, F.-Y.; Fang, W.-W.; Liow, T.-Y.; Tan, K.-M.; Lim, P.-C.; Lim, A.E.-J.; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Lo, G.-Q.; Wang, X.; Low, D.K.-Y.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
182007Silicon nano-wire impact ionization transistors with multiple-gates for enhanced gate control and performanceToh, E.-H.; Wang, G.H.; Shen, C.; Zhu, M. ; Chan, L.; Heng, C.-H. ; Samudra, G. ; Yeo, Y.-C. 
192007Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETsWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T.; Chan, T.K.; Hoe, K.M.; Balakumar, S.; Tung, C.H.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
202007Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scalingZhao, H.; Agrawal, N.; Javier, R.; Rustagi, S.C.; Jurczak, M.; Yeo, Y.-C. ; Samudra, G.S.