Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83727
Title: Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
Authors: Wang, G.H.
Toh, E.-H.
Tung, C.-H.
Foo, Y.-L.
Tripathy, S.
Lo, G.-Q.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Citation: Wang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository.
Abstract: A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs. © 2007 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83727
ISBN: 9781558999541
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.