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Title: | Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing | Authors: | Wang, G.H. Toh, E.-H. Tung, C.-H. Foo, Y.-L. Tripathy, S. Lo, G.-Q. Samudra, G. Yeo, Y.-C. |
Issue Date: | 2007 | Citation: | Wang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository. | Abstract: | A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs. © 2007 Materials Research Society. | Source Title: | Materials Research Society Symposium Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/83727 | ISBN: | 9781558999541 | ISSN: | 02729172 |
Appears in Collections: | Staff Publications |
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