Full Name
Xuanyao Fong
 
 
Email
elefongx@nus.edu.sg
 

Results 41-60 of 104 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
4123-Aug-2023Engineering Refractive Index Contrast in Thin Film Barium Titanate-on-InsulatorCao, Yu ; Liang, Haidong ; Lin, Hong-Lin; Qi, Luo ; Yang, Ping ; Fong, Xuanyao ; Dogheche, Elhadj; Bettiol, Andrew ; Danner, Aaron 
4220-Jun-2021Exchange-Coupling-Enabled Electrical-Isolation of Compute and Programming Paths in Valley-Spin Hall Effect based Spintronic Device for Neuromorphic ApplicationsCho, K; Fong, X ; Gupta, SK
431-Mar-2015Exploring Spin Transfer Torque Devices for Unconventional ComputingRoy, Kaushik; Fan, Deliang; Fong, Xuanyao ; Kim, Yusung; Sharad, Mrigank; Paul, Somnath; Chatterjee, Subho; Bhunia, Swarup; Mukhopadhyay, Saibal
441-Jan-2013Exploring the Design of Ultra-Low Energy Global Interconnects Based on Spin-Torque SwitchesSharad, Mrigank; Fong, Xuanyao ; Roy, Kaushik 
455-Oct-2012Exploring variability and reliability of multi-level STT-MRAM cellsPanagopoulos, G; Augustine, C; Fong, X ; Roy, K 
461-Feb-2014Failure Mitigation Techniques for 1T-1MTJ Spin-Transfer Torque MRAM Bit-cellsFong, Xuanyao ; Kim, Yusung; Choday, Sri Harsha; Roy, Kaushik
4726-Sep-2018FANTASI: a novel device-to-circuits simulation framework for fast estimation of write error rates in spintronicsMiriyala, Pavan ; Fong Xuanyao ; Liang, Gengchiau 
481-Apr-2017Fast and Disturb-Free Nonvolatile Flip-Flop Using Complementary Polarizer MTJSeo, Yeongkyo; Fong, Xuanyao ; Roy, Kaushik
491-Jan-2014Feasibility Study of Emerging Non-Volatile Memory Based Physical Unclonable FunctionsZhang, Le; Fong, Xuanyao ; Chang, Chip-Hong ; Kong, Zhi Hui; Roy, Kaushik 
501-Jan-2014Generating True Random Numbers Using On-chip Complementary Polarizer Spin-Transfer Torque Magnetic Tunnel JunctionsFong, Xuanyao ; Chen, Mei-Chin; Roy, Kaushik 
511-Aug-2020Gradual Resistive Switching in Electron Beam Irradiated ReS<inf>2</inf>Transistor and its Application as Electronic SynapseLi, S ; Li, B ; Feng, X ; Chen, L ; Li, Y ; Huang, L ; Gong, X ; Fong, X ; Ang, KW 
521-Jan-2022Hardware Implementation for Spiking Neural Networks on Edge DevicesNguyen, TNN; Veeravalli, B ; Fong, X 
531-Sep-2016High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAMSeo, Yeongkyo; Kwon, Kon-Woo; Fong, Xuanyao ; Roy, Kaushik
541-Nov-2015High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture InteractionsKwon, Kon-Woo; Fong, Xuanyao ; Wijesinghe, Parami; Panda, Priyadarshini; Roy, Kaushik
551-Jan-2014Highly Reliable Memory-based Physical Unclonable Function Using Spin-Transfer Torque MRAMZhang, Le; Fong, Xuanyao ; Chang, Chip-Hong ; Kong, Zhi Hui; Roy, Kaushik 
561-Aug-2015Highly Reliable Spin-Transfer Torque Magnetic RAM-Based Physical Unclonable Function With Multi-Response-Bits Per CellZhang, Le; Fong, Xuanyao ; Chang, Chip-Hong; Kong, Zhi Hui; Roy, Kaushik
572019Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAMSamanta, Subhranu ; Zhang, Panpan ; Han, Kaizhen ; Gong, Xiao ; Chakraborty, Sandipan ; Li, Yida ; Fong, Xuanyao 
58Aug-2022Impact of Trap Profile on the Characteristics of 2-D MoS<sub>2</sub> Memtransistors: A Simulation StudyZhang, Panpan ; Feng, Xuewei ; Fong, Xuanyao 
591-Feb-2019Influence of Size and Shape on the Performance of VCMA-Based MTJsMiriyala, Venkata Pavan Kumar ; Fong, Xuanyao ; Liang, Gengchiau 
601-Nov-2011KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cellsFong, X ; Gupta, SK; Mojumder, NN; Choday, SH; Augustine, C; Roy, K