Please use this identifier to cite or link to this item: https://doi.org/10.1109/FLEPS.2019.8792259
Title: Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
Authors: Samanta, Subhranu 
Zhang, Panpan 
Han, Kaizhen 
Gong, Xiao 
Chakraborty, Sandipan 
Li, Yida 
Fong, Xuanyao 
Keywords: Science & Technology
Technology
Engineering, Manufacturing
Engineering, Electrical & Electronic
Instruments & Instrumentation
Materials Science, Multidisciplinary
Engineering
Materials Science
Flexible
RRAM
SiOx
Low CC
Issue Date: 2019
Publisher: IEEE
Citation: Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao (2019). Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiOx-Based Flexible Cross-Point RRAM. 1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS). ScholarBank@NUS Repository. https://doi.org/10.1109/FLEPS.2019.8792259
Abstract: The impact of Ti interfacial layer on resistive switching characteristics in 5×5 μm2 Ni/Ti/SiOx /Ni flexible cross-point resistive random access memory (RRAM) structure for the first time. Devices with Ti buffer layer exhibits bipolar resistive switching (BRS) with large memory window (HRS/LRS) of > 103 at 500 nA current compliance (CC). Thin 4-nm Ti interfacial layer regulates the migration of oxygen ions (O-2) and controls BRS process. Highly non-linear (non-linearity of > 22) switching (rectifying ratio i.e, RR of >4×103) is obtained from reference sample without (W/O) Ti buffer layer.
Source Title: 1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS)
URI: https://scholarbank.nus.edu.sg/handle/10635/245806
ISBN: 9781538693049
DOI: 10.1109/FLEPS.2019.8792259
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